PJF2N70 Datasheet, Mosfet, Pan Jit International

PDF File Details

Part number:

PJF2N70

Manufacturer:

Pan Jit International

File Size:

315.09kb

Download:

📄 Datasheet

Description:

700v n-channel enhancement mode mosfet.

TAGS

📁 Related Datasheet

PJF2N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low .

PJF2NA60 - 600V N-Channel MOSFET (Pan Jit International)
PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/d.

PJF2NA90 - 900V N-Channel MOSFET (Pan Jit International)
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@10V,ID@1A<6.4Ω  High switchin.

PJF20N65 - 650V N-Channel MOSFETs (Potens semiconductor)
650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog.

PJF20N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJF20N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJF20N70T - N-Channel MOSFETS (Potens semiconductor)
700V N-Channel MOSFETS PJF20N70T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJF21N50T - N-Channel MOSFETS (Potens semiconductor)
Preliminary datasheet 500V N-Channel MOSFETS PJF21N50T General Description These N-Channel enhancement mode power field effect transistors are usin.

PJF24N10 - 100V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP24N10 / PJF24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(.

PJF04N70L - N-Channel MOSFETS (Potens semiconductor)
700V N-Channel MOSFETs PJF04N70L General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJF10N60 - 600V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Swi.