PJF20N65 Datasheet - Potens semiconductor

PJF20N65 650V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutatio.

PJF20N65 Features

* 20A,650V, RDS(ON) =0.19Ω@VGS = 10V Low gate charge (typical 52nC) Low Crss (typical 8.5 pF) Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies TV Power Adapter/charger Server Power PV Inverter / UPS ℃Absolute

PJF20N65 Datasheet (202.29 KB)