PJF21N50T N-Channel MOSFETS

Potens semiconductor

Description

Preliminary datasheet 500V N-Channel MOSFETS PJF21N50T General .
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

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Datasheet Specifications

Part number: PJF21N50T
Manufacturer: Potens semiconductor
File Size: 770.82 KB
Datasheet: PJF21N50T-Potenssemiconductor.pdf
Description: N-Channel MOSFETS

Features

* 21A,500V, RDS(ON) =0.22Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Applications

* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG 5TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25℃) (Chip Limita

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PJF21N50T N-Channel MOSFETS Potens semiconductor

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