PJF20N65D Datasheet - Potens semiconductor

PJF20N65D, N-Channel MOSFETS

650V N-Channel MOSFETS PJF20N65D General .
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

Features

* 20A,650V, RDS(ON) =0.2Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Applications

* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25℃) Drain Current

PJF20N65D-Potenssemiconductor.pdf