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PJP4N60 600V N-Channel Enhancement Mode MOSFET

PJP4N60 Description

PJP4N60 / PJF4N60 600V N-Channel Enhancement Mode MOSFET .

PJP4N60 Features

* 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A
* Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 200

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Datasheet Details

Part number
PJP4N60
Manufacturer
Pan Jit International
File Size
243.91 KB
Datasheet
PJP4N60_PanJitInternational.pdf
Description
600V N-Channel Enhancement Mode MOSFET

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600V N-Channel Enhancement Mode MOSFET Pan Jit International
Pan Jit International PJP4N60-like datasheet