2PG401 - Insulated Gate Bipolar Transistor

Panasonic Semiconductor

Datasheet Details

Part number	2PG401
Manufacturer	Panasonic ↗ Semiconductor
File Size	22.05 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	2PG401_PanasonicSemiconductor.pdf

q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package 7.2±0.3 0.8±0.2 unit: mm 7.0±0.3 3.0±0.2 3.5±0.2 s.

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Published: Mar 22, 2005 |