q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit:
✔ 2PG401 Application
q For flash-light for use in a camera
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
s Absolute Maximum Ratings (TC =
2PG402, Panasonic Semiconductor
IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A .
2PG001, Panasonic
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive For high s.
2PG002, Panasonic
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high s.
2PG006, Panasonic
IGBT
This product plies with the RoHS Directive (EU 2002/95/EC).
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2PG009, Panasonic
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive For hig.
2PG011, Panasonic
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plasma display panel drive For hig.
2P102A, Fairchild Semiconductor
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FDFS2P102A
August 2001
FDFS2P102A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P102.