* Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
* High speed hall time: tf = 250 nsec(typ.)
* Package
* Code TO-220F-A1
* Marking Symbol: 2PG001 Unit V V A A W W °C °C E G
* Absolute Maximum Ratings TC = 25°C Parameter Collector-emitter voltag
2PG001
Panasonic
283.24 KB
N-channel enhancement mode igbt.
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive For high s.
📁 Related Datasheet
2PG002 - N-Channel IGBT
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high s.
2PG006 - Silicon N-channel enhancement IGBT
(Panasonic)
IGBT
This product plies with the RoHS Directive (EU 2002/95/EC).
PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnln.
2PG009 - Silicon N-Channel IGBT
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive For hig.
2PG011 - Silicon N-Channel Enhancement IGBT
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plasma display panel drive For hig.
2PG401 - Insulated Gate Bipolar Transistor
(Panasonic Semiconductor)
IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A .
2PG402 - Insulated Gate Bipolar Transistor
(Panasonic Semiconductor)
IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A .
2P05M - Opto-Electronic Devices
(NEC)
.
2P102A - FDFS2P102A
(Fairchild Semiconductor)
.DataSheet.co.kr
FDFS2P102A
August 2001
FDFS2P102A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P102.
