* Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
* High-speed switching: tf = 175 ns (typ.)
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES
* 30 t
2PG006
Panasonic
344.27 KB
Silicon n-channel enhancement igbt.
IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
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