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2PG006 - Silicon N-channel enhancement IGBT

Panasonic

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Datasheet Details

Part number	2PG006
Manufacturer	Panasonic ↗
File Size	344.27 KB
Description	Silicon N-channel enhancement IGBT
Datasheet	2PG006-Panasonic.pdf

2PG006 Product details

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
High-speed switching: tf = 175 ns (typ. ).
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES.
30 to +35 V Collector current IC 40 A Peak collector current.
ICP 230 A Power dissipation 40 W Ta = 25°C PC 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg.
55.

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Published: Mar 27, 2016 |