Datasheet Details
Part number:
2PG006
Manufacturer:
Panasonic
File Size:
344.27 KB
Description:
Silicon N-channel enhancement IGBT
Features
* Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
* High-speed switching: tf = 175 ns (typ.)
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES
* 30 t
