2PG006 Silicon N-channel enhancement IGBT

Panasonic

Description

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Datasheet Specifications

Part number: 2PG006
Manufacturer: Panasonic
File Size: 344.27 KB
Datasheet: 2PG006-Panasonic.pdf
Description: Silicon N-channel enhancement IGBT

Features

* Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
* High-speed switching: tf = 175 ns (typ. )
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES
* 30 t

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2PG006 Silicon N-channel enhancement IGBT Panasonic

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