2PG011 Silicon N-Channel Enhancement IGBT

Panasonic

Description

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For hig.

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Datasheet Specifications

Part number: 2PG011
Manufacturer: Panasonic
File Size: 465.69 KB
Datasheet: 2PG011-Panasonic.pdf
Description: Silicon N-Channel Enhancement IGBT

Features

* Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
* High-speed switching: tf = 185 ns (typ. )
* Package
* Code TO-220D-A1
* Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector curr

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2PG011 Silicon N-Channel Enhancement IGBT Panasonic

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