* Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
* High-speed switching: tf = 185 ns (typ.)
* Package
* Code TO-220D-A1
* Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector curr
2PG011
Panasonic
465.69 KB
Silicon n-channel enhancement igbt.
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plasma display panel drive For hig.
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FDFS2P102A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
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The FDFS2P102.
