2PG402 - Insulated Gate Bipolar Transistor

Panasonic Semiconductor

Datasheet Details

Part number	2PG402
Manufacturer	Panasonic ↗ Semiconductor
File Size	33.76 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	2PG402_PanasonicSemiconductor.pdf

q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s.

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Published: Mar 22, 2005 |