* Optimum for 120 W HiFi output
* High forward current transfer ratio hFE
* Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3
* Absolute Maximum Rating
2SB1470
Panasonic Semiconductor
84.45 KB
Silicon pnp transistor.
Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amplification Complementar.
📁 Related Datasheet
2SB1470 - SILICON POWER TRANSISTOR
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..
Product Specification
Silicon PNP Power Transistors
2SB1470
DESCRIPTION ·With TO-3PL package ·Complemen.
2SB1470 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat.
2SB1471 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3365
PNP/NPN Epitaxial Planar Silicon Transistors
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Driver Applications
Applications
· Motor drivers, printer hammer.
2SB1472 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3366
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1472/2SD2224
Driver Applications
Applications
· Motor drivers, printer hammer.
2SB1474 - Power Transistor
(Rohm)
2SB1474
Transistor
Power Transistor (−80V, −4A)
2SB1474
Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emit.
2SB1474 - Power Transistor
(Rohm)
2SB1474
Transistor
Power Transistor (−80V, −4A)
2SB1474
Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emit.
2SB1475 - PNP SILICON EPITAXIAL TRANSISTOR
(NEC)
.
2SB1475 - PNP Silicon Epitaxial Transistor
(Kexin)
SMD Type
PNP Silicon Epitaxial Transistor 2SB1475
Transistors IC
Features
Super miniature package. High DC current IC(DC)=500mA max. Low VCE(sat): V.
