Datasheet4U Logo Datasheet4U.com

2SC5622 NPN Transistor

2SC5622 Description

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5.

2SC5622 Features

* High breakdown voltage: 1 500 V
* High-speed switching
* Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Sol

2SC5622 Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

📥 Download Datasheet

Preview of 2SC5622 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SC5620 - Silicon NPN Transistor (ETC)
  • 2SC5621 - NPN TRANSISTOR (ETC)
  • 2SC5625 - SMALL-SIGNAL TRANSISTOR (ISAHAYA ELECTRONICS)
  • 2SC5628 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC5604 - NPN SILICON RF TRANSISTOR (NEC)
  • 2SC5606 - NPN TRANSISTOR (NEC)
  • 2SC5607 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5609G - Silicon NPN Transistor (Panasonic)

📌 All Tags

Panasonic Semiconductor 2SC5622-like datasheet