* 5˚
* High collector-emitter voltage (Base open) VCEO 1 2 (0.65)
* High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+
* 00..0250 /
* Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 300 1.
2SC5863
Panasonic Semiconductor
215.47 KB
Silicon npn transistor.
Transistors 2SC5863 Silicon NPN epitaxial planar type For general amplification 0.40+ 00..0150 3 Unit: mm 0.16+ 00..0160 1.50
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