2SC5868
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Medium power transistor.
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2SC5863 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
0.40+–00..0150 3
Unit: mm 0.16+–00..0160
1.50–+00..0255 2.8–+00..32.
2SC5865 - Transistors
(Rohm)
..
2SC5865
Transistors
High voltage discharge, High speed switching, Low Noise (60V, 1A)
2SC5865
zFeatures 1) High speed switching..
2SC5866 - Medium power transistor
(Rohm)
2SC5866
Transistor
Medium power transistor (60V, 2A)
2SC5866
Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation volta.
2SC5800 - NPN SILICON RF TRANSISTOR
(Renesas)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FE.
2SC5801 - NPN TRANSISTOR
(NEC)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5801
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low phase di.
2SC5802 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area .
2SC5802 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5802
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5803 - Silicon NPN Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5803
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5804 - SMALL-SIGNAL TRANSISTOR
(Isahaya Electronics Corporation)
..
〈SMALL-SIGNAL TRANSISTOR〉
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION
2SC5804 is a supe.
2SC5807 - Silicon NPN Transistor
(Isahaya Electronics Corporation)
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ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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