2SC5866 - Medium power transistor

Datasheet Details

1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 0.1 (1)Base (2)Emitter (3)Collector 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VL !.

📁 2SC5866 Similar Datasheet

2SC5863 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC5800 - NPN SILICON RF TRANSISTOR (Renesas)
2SC5801 - NPN TRANSISTOR (NEC)
2SC5802 - Silicon NPN Power Transistors (SavantIC)
2SC5803 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
2SC5804 - SMALL-SIGNAL TRANSISTOR (Isahaya Electronics Corporation)
2SC5807 - Silicon NPN Transistor (Isahaya Electronics Corporation)
2SC5808 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

Other Datasheets by Rohm

Published: Apr 3, 2005 |