* q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9
* 0.05 1 1.9±0.2 +0.2 0.95 3 0.4
* 0.05 +0.1 2 1.45 Drain to Source voltage Gate to Drain voltage G
2SK374
Panasonic Semiconductor
33.01 KB
N-channel mosfet.
Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.65±0.15
+0.2
unit: mm
0.6.
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