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2SK3022 - Silicon N-Channel Power F-MOS FET

2SK3022 Description

Power F-MOS FETs 2SK3022 (Tentative) Silicon N-Channel Power F-MOS FET s .

2SK3022 Features

* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1

2SK3022 Applications

* 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 60 ±20 ±5 ±10 1.25 10 1 150
* 55 to +150 Unit V V A A mJ

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Preview of 2SK3022 PDF

Datasheet Details

Part number
2SK3022
Manufacturer
Panasonic Semiconductor
File Size
24.21 KB
Datasheet
2SK3022_PanasonicSemiconductor.pdf
Description
Silicon N-Channel Power F-MOS FET

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📌 All Tags

Silicon N-Channel Power F-MOS FET Panasonic Semiconductor
Panasonic Semiconductor 2SK3022-like datasheet