q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit
✔ 2SK3027 Application
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings (TC
2SK302, Toshiba Semiconductor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302
2SK302
FM Tuner, VHF RF Amplifier Applications
Unit: mm
• Low reverse transfer c.
2SK3022, Panasonic Semiconductor
Power F-MOS FETs
2SK3022 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3023, Panasonic Semiconductor
Power F-MOS FETs
2SK3023 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3024, Panasonic Semiconductor
Power F-MOS FETs
2SK3024 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3025, Panasonic Semiconductor
Power F-MOS FETs
2SK3025 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3026, Panasonic Semiconductor
Power F-MOS FETs
2SK3026 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3028, Panasonic Semiconductor
Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3029, Panasonic Semiconductor
Power F-MOS FETs
2SK3029 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
