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2SK3025 Datasheet - Panasonic Semiconductor

2SK3025, Silicon N-channel power MOS FET

Power F-MOS FETs 2SK3025 (Tentative) Silicon N-Channel Power F-MOS FET s .
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2SK3025_PanasonicSemiconductor.pdf

Preview of 2SK3025 PDF

Datasheet Details

Part number:

2SK3025

Manufacturer:

Panasonic Semiconductor

File Size:

168.51 KB

Description:

Silicon N-channel power MOS FET

Features

* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1

Applications

* 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 60 ±20 ±30 ±60 45 20 1 150
* 55 to +150 Unit V V A A mJ 1

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