Description
Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit: mm For switching I .
Features
* (0.425)
0.3+0.1
* 0.0 3
0.15+0.10
* 0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PD
Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff
