LN151F - GaAs Infrared Light Emitting Diodes

Panasonic Semiconductor

Datasheet Details

Part number	LN151F
Manufacturer	Panasonic ↗ Semiconductor
File Size	40.94 KB
Description	GaAs Infrared Light Emitting Diodes
Datasheet	LN151F_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 7.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ. ) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 ma.

📁 LN151F Similar Datasheet

LN15 - Single Jacket Non-Armored (Samsung semiconductor)
LN15XB60 - Bridge Bridge (SHINDENGEN)
LN15XB60H - Bridge Bridge (SHINDENGEN)
LN100 - N-Channel MOSFET (Supertex)
LN1001 - single-chip Power Bank dedicated IC (natlinear)
LN10N10 - 10A/100V withstand voltage N-channel enhanced FET (natlinear)
LN1120 - 300mA Low Dropout CMOS Voltage Regulators (natlinear)
LN1121 - Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)

Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |