Part number:
LN151F
Manufacturer:
Panasonic Semiconductor
File Size:
40.94 KB
Description:
Gaas infrared light emitting diodes.
* High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light
LN151F
Panasonic Semiconductor
40.94 KB
Gaas infrared light emitting diodes.
📁 Related Datasheet
LN151L GaAs Infrared Light Emitting Diodes (Panasonic Semiconductor)
LN15 Single Jacket Non-Armored (Samsung semiconductor)
LN152 GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LN15XB60 Bridge Bridge (SHINDENGEN)
LN15XB60H Bridge Bridge (SHINDENGEN)
LN100 N-Channel MOSFET (Supertex)
LN1001 single-chip Power Bank dedicated IC (natlinear)
LN10N10 10A/100V withstand voltage N-channel enhanced FET (natlinear)
LN1120 300mA Low Dropout CMOS Voltage Regulators (natlinear)
LN1121 Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)
