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LN65 GaAs Infrared Light Emitting Diode

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Description

Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .

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Datasheet Specifications

Part number
LN65
Manufacturer
Panasonic Semiconductor
File Size
44.63 KB
Datasheet
LN65_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 5.5 mW (typ. ) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2-0

LN65 Distributors

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GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN65-like datasheet