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LN65 - GaAs Infrared Light Emitting Diode

Datasheet Summary

Features

  • High-power output, high-efficiency : PO = 5.5 mW (typ. ) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Rev.

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Datasheet Details

Part number LN65
Manufacturer Panasonic Semiconductor
File Size 44.63 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN65 Datasheet
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Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.
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