LN66 - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN66
Manufacturer	Panasonic Semiconductor
File Size	47.61 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse volta.

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Published: Mar 22, 2005 |