Part number:
LN66
Manufacturer:
Panasonic Semiconductor
File Size:
47.61 KB
Description:
Gaas infrared light emitting diode.
* High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not
LN66
Panasonic Semiconductor
47.61 KB
Gaas infrared light emitting diode.
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