Datasheet4U Logo Datasheet4U.com

LN66 Datasheet - Panasonic Semiconductor

LN66 GaAs Infrared Light Emitting Diode

LN66 Features

* High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not

LN66 Datasheet (47.61 KB)

Preview of LN66 PDF
LN66 Datasheet Preview Page 2 LN66 Datasheet Preview Page 3

Datasheet Details

Part number:

LN66

Manufacturer:

Panasonic Semiconductor

File Size:

47.61 KB

Description:

Gaas infrared light emitting diode.

📁 Related Datasheet

LN6011 3W Stereo Audio Power Amplifier (natlinear)

LN60A Single Cell Li-Ion battery indicator chip (natlinear)

LN60N04 60A/40V withstand voltage N-channel enhanced FET (natlinear)

LN6101 Super capacitor charging protection chip (natlinear)

LN6102 Lead acid battery display (natlinear)

LN6103 Super capacitor charging protection chip (natlinear)

LN61A Ultra-Small Package High-Programmable Precision Voltage Detector (natlinear)

LN61C Ultra-Small Package High-Precision Voltage Detector (natlinear)

TAGS

LN66 GaAs Infrared Light Emitting Diode Panasonic Semiconductor

LN66 Distributor