LN66 - GaAs Infrared Light Emitting Diode

Name: LN66
SKU: LN66-60181

Panasonic Semiconductor

The LN66 by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN66
Manufacturer	Panasonic Semiconductor
File Size	47.61 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66_PanasonicSemiconductor.pdf
Additional preview pages of the LN66 datasheet.

High-power output, high-efficiency : PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse volta.

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Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |