Datasheet Specifications
- Part number
- LN66
- Manufacturer
- Panasonic Semiconductor
- File Size
- 47.61 KB
- Datasheet
- LN66_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 NotLN66 Distributors
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