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LN66F GaAs Infrared Light Emitting Diode

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Description

Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems .

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Datasheet Specifications

Part number
LN66F
Manufacturer
Panasonic Semiconductor
File Size
41.81 KB
Datasheet
LN66F_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : Ie = 13.0 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathod

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