Part number:
LN66F
Manufacturer:
Panasonic Semiconductor
File Size:
41.81 KB
Description:
Gaas infrared light emitting diode.
Datasheet Details
LN66F Features
* High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathod
Datasheet Details
LN66F
Panasonic Semiconductor
41.81 KB
Gaas infrared light emitting diode.
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LN66F Distributor