LN66F Datasheet, Diode, Panasonic Semiconductor

✔ LN66F Features

High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent e

Panasonic Semiconductor manufacturer logo

LN66F

Panasonic Semiconductor

41.81 KB

Gaas infrared light emitting diode.

📁 Related Datasheet

LN66 - GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LN66L - GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LN6011 - 3W Stereo Audio Power Amplifier (natlinear)

LN60A - Single Cell Li-Ion battery indicator chip (natlinear)

LN60N04 - 60A/40V withstand voltage N-channel enhanced FET (natlinear)

LN6101 - Super capacitor charging protection chip (natlinear)

LN6102 - Lead acid battery display (natlinear)

LN6103 - Super capacitor charging protection chip (natlinear)

Stock and price

Panasonic Electronic Components

EMITTER IR 950NM 50MA

LN66F

0 In Stock

Unit Price : $0

TAGS