Datasheet4U Logo Datasheet4U.com

LN66F - GaAs Infrared Light Emitting Diode

Datasheet Summary

Features

  • High-power output, high-efficiency : Ie = 13.0 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

📥 Download Datasheet

Datasheet preview – LN66F

Datasheet Details

Part number LN66F
Manufacturer Panasonic Semiconductor
File Size 41.81 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN66F Datasheet
Additional preview pages of the LN66F datasheet.

📁 Similar Datasheet

  • LN6011 - 3W Stereo Audio Power Amplifier (natlinear)
  • LN60A - Single Cell Li-Ion battery indicator chip (natlinear)
  • LN60N04 - 60A/40V withstand voltage N-channel enhanced FET (natlinear)
  • LN6101 - Super capacitor charging protection chip (natlinear)
  • LN6102 - Lead acid battery display (natlinear)
  • LN6103 - Super capacitor charging protection chip (natlinear)
  • LN61A - Ultra-Small Package High-Programmable Precision Voltage Detector (natlinear)
  • LN61C - Ultra-Small Package High-Precision Voltage Detector (natlinear)
  • LN61F - Voltage Detectors (natlinear)
  • LN6206 - Low Power Low Dropout Middle Current Voltage Regulators (Natlinear)
Other Datasheets by Panasonic Semiconductor
  • LN66 - GaAs Infrared Light Emitting Diode
  • LN66L - GaAs Infrared Light Emitting Diode
  • LN61C - GaAs INFRARED LIGHT EMITTING DIODE
  • LN65 - GaAs Infrared Light Emitting Diode
  • LN671 - GaAlAs Infrared Light Emitting Diode
  • LN69 - GaAs Infrared Light Emitting Diode

Full PDF Text Transcription

Click to expand full text
Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems Features High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.
Published: |