LN671 Datasheet PDF - Panasonic Semiconductor GaAlAs Infrared Light Emitting Diode Specs

LN671 - GaAlAs Infrared Light Emitting Diode

Datasheet Summary

Features

High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ. ) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1.
0.2 1.0±0.1 4.3 max. 0.2 +0.1.
0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
5˚ Symbol PD IF IFP.

Datasheet Details

Part number	LN671
Manufacturer	Panasonic Semiconductor
File Size	43.24 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN671 Datasheet
Additional preview pages of the LN671 datasheet.

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Full PDF Text Transcription

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Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.0±0.1 2.54±0.1 3 1.0±0.1 Unit : mm 1.8±0.3 0.8±0.2 Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1 –0.2 1.0±0.1 4.3 max. 0.2 +0.1 –0.05 4-0.5±0.

Published: Mar 22, 2005 |