* High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1
* 0.2 1.0±0.1 4.3 max. 0.2 +0.1
* 0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Max
LN671
Panasonic Semiconductor
43.24 KB
Gaalas infrared light emitting diode.
Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
4 5.3 max. 5.0±0.1 2.54±0.1 3
1.
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