LN671 - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN671
Manufacturer	Panasonic ↗ Semiconductor
File Size	43.24 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN671_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ. ) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1.
0.2 1.0±0.1 4.3 max. 0.2 +0.1.
0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
5˚ Symbol PD IF IFP.

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Published: Mar 22, 2005 |