LN671 GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max.5.0±0.1 2.54±0.1 3 1.

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Datasheet Specifications

Part number: LN671
Manufacturer: Panasonic Semiconductor
File Size: 43.24 KB
Datasheet: LN671_PanasonicSemiconductor.pdf
Description: GaAlAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ. ) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1
* 0.2 1.0±0.1 4.3 max. 0.2 +0.1
* 0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Max

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LN671 GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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