Description
Pin No.
10˚C to +70˚C
2 to 3 V Operation 5 V Operation
Parameter Power supply voltage Input leakage current at "L" level Input leakage current at "H" level Output leakage current Input voltage at "L" level Input voltage at "H" level VCC power suppl
Features
- Choice of memory organizations: 256 × 8 bits and 128 × 16 bits Floating gate memory cells Function blocking erroneous writes Low power consumption - Reads: max. 6.6 mW for VCC = 3.3 V - Standby: max. 66 µW for VCC = 3.3 V Built-in self-timer for use in automatically erasing and writing Built-in error correction circuit that guarantees 105 write cycles 10-year data preservation period.
MN63112S_PanasonicSemiconductor.pdf
