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XN111H - Silicon PNP epitaxial planer transistor

XN111H Description

Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.

XN111H Features

* 1 Composite Transistors PT
* Ta 500 XN111H Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE
* 120
* 100 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE

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Datasheet Details

Part number
XN111H
Manufacturer
Panasonic Semiconductor
File Size
32.52 KB
Datasheet
XN111H_PanasonicSemiconductor.pdf
Description
Silicon PNP epitaxial planer transistor

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Silicon PNP epitaxial planer transistor Panasonic Semiconductor
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