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XN121E - Silicon NPN epitaxial planer transistor

XN121E Description

Composite Transistors XN121E Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.

XN121E Features

* 1 Composite Transistors PT
* Ta 500 XN121E Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 60 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 Ta=75

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Datasheet Details

Part number
XN121E
Manufacturer
Panasonic Semiconductor
File Size
33.94 KB
Datasheet
XN121E_PanasonicSemiconductor.pdf
Description
Silicon NPN epitaxial planer transistor

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Silicon NPN epitaxial planer transistor Panasonic Semiconductor
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