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2SK4174 - Silicon N-channel enhancement MOS FET

2SK4174 Description

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2SK4174 Features

* Gate-source surrender voltage VGSS : ±25 V guaranteed
* Avalanche energy capability guaranteed: EAS > 216 mJ
* High-speed switching: tf = 90 ns (typ. )
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surr

2SK4174 Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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Datasheet Details

Part number
2SK4174
Manufacturer
Panasonic
File Size
297.18 KB
Datasheet
2SK4174-Panasonic.pdf
Description
Silicon N-channel enhancement MOS FET

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Silicon N-channel enhancement MOS FET Panasonic
Panasonic 2SK4174-like datasheet

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