K4174 Datasheet - Panasonic

K4174 Silicon N-channel enhancement MOS FET

K4174 Features

* Gate-source surrender voltage VGSS : ±25 V guaranteed

* Avalanche energy capability guaranteed: EAS > 216 mJ

* High-speed switching: tf = 90 ns (typ.)

* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surr

Datasheet Details

K4174

Panasonic

297.18 KB

Silicon n-channel enhancement mos fet.

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K4174 Silicon N-channel enhancement MOS FET Panasonic

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