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K4174 - Silicon N-channel enhancement MOS FET

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Panasonic

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K4174 Silicon N-channel enhancement MOS FET by Panasonic - Datasheet Preview — Datasheet preview – K4174

Datasheet Details

Part number	K4174
Manufacturer	Panasonic
File Size	297.18 KB
Description	Silicon N-channel enhancement MOS FET
Datasheet	K4174 Datasheet
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Product details

Features

s.
Gate-source surrender voltage VGSS : ±25 V guaranteed.
Avalanche energy capability guaranteed: EAS > 216 mJ.
High-speed switching: tf = 90 ns (typ. ).
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current.
Avalanche energy capability VDSS VGSS ID IDP EAS 110 ±25 ±28 ±130 216 V V A A mJ Avalanche energy capability.
EAR 69 mJ 40 W Drain p.

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Published: Mar 27, 2016 |