MA2H735 Datasheet (Panasonic) - Schottky Barrier Diodes (SBD)

MA2H735, Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 Small and thin Half New Mini-power package Allowing to rectify under (IF(AV) = 1 A) condition Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A 1.9 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature Symb

MA2H735 Features

* 1 MA2H735 IF  V F 1 Schottky Barrier Diodes (SBD) IR  V R 10 Ta = 125°C 1 75°C 25°C

* 20°C Ct  VR 300 Ta = 25°C 75°C 10

* 1 Terminal capacitance Ct (pF) Ta = 125°C 10

* 1 250 Reverse current IR (mA) Forward current IF (A) 200 10

* 2 150 10

* 3 10