MA2H736 Datasheet - Panasonic

MA2H736 Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 Small and thin Half New Mini-power package Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.1 2 1 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125.

MA2H736 Features

* 1 MA2H736 IF  V F 1 Schottky Barrier Diodes (SBD) VF  Ta 0.8 0.7 1 75°C 25°C

* 20°C 10 Ta = 125°C IR  VR 10

* 1 Ta = 125°C Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 Reverse current IR (mA) Forward voltage VF (V) 75°C 10

* 1 10

* 2 IF = 1 A 10

* 3

MA2H736_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

MA2H736

Manufacturer:

Panasonic

File Size:

43.91 KB

Description:

Schottky barrier diodes (sbd).

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MA2H736 MA2H736 Schottky Barrier Diodes SBD Panasonic

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