MA2J112 Datasheet - Panasonic

MA2J112 Switching Diodes

Switching Diodes MA2J112 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 Small S-mini type package, allowing high-density mounting Ensuring the average forward current capacity IF(AV) = 200 mA 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current 1 Peak forward current Non-repetitive peak forward surge current 2 Junction temperature Storage temperature Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 6.

MA2J112 Features

* 0.3 1 MA2J112 IF  VF 1 000 100 Ta = 150°C Switching Diodes IR  V R 1.6 1.4 VF  Ta 100 Forward current IF (mA) 10 Reverse current IR (µA) Forward voltage VF (V) Ta = 150°C 100°C 10 25°C

* 20°C 1 1.2 1.0 0.8 0.6 10 mA 0.4 3 mA 0.2 IF = 200 mA 100°C 1 0.1 25°C 0.01 0.1 0.01

MA2J112_PanasonicSemiconductor.pdf