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Switching Diodes
MA2J116
Silicon epitaxial planar type
Unit : mm
For general purpose I Features
• Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns)
K
A
0.625
2
1
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s
Symbol VR VRM IF(AV) IFM IFSM Tj Tstg
Rating 40 40 100 225 500 150 −55 to +150
Unit V V mA mA mA °C °C
0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.