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2SJ163 - P-Channel MOSFET

2SJ163 Description

Silicon Junction FETs (Small Signal) 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 0.65±0.15 +0.2 unit: mm 0..

2SJ163 Features

* 2.9
* 0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4
* 0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS

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P-Channel MOSFET Panasonic Semiconductor
Panasonic Semiconductor 2SJ163-like datasheet