2SJ0536 Datasheet (Panasonic Semiconductor)

2SJ0536, P-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

q Low-voltage drive (Vth: 1 to 2V) q Low Ron 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source

2SJ0536 Features

* 1 Silicon MOS FETs (Small Signal) PD  Ta 200

* 120 2SJ0536 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=

* 5V 50 Allowable power dissipation PD (mW) 160

* 100 Drain current ID (mA)

* 80 VGS=

* 5.5V

* 60

* 5.0V