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2SJ164 - P-Channel MOSFET

2SJ164 Description

Silicon Junction FETs (Small Signal) 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 s .

2SJ164 Features

* q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65
* 20

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Panasonic Semiconductor 2SJ164-like datasheet