PE4231 Datasheet PDF - Peregrine Semiconductor SPDT High Power UltraCMOS Specs

PE4231 - SPDT High Power UltraCMOS

Datasheet Summary

Description

The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz.

This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input.

Features

Optimized for 75 Ω systems.
Single +3-volt power supply.
Low insertion loss: 0.80 dB at 1.0 GHz.
High isolation: 42 dB at 1.0 GHz.
Typical input 1 dB compression point of +32 dBm.
Single-pin CMOS or TTL logic control.
Low cost Figure 2. Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 Ω) Parameter Operation Frequency Insertion Loss Isolation.

Datasheet Details

Part number	PE4231
Manufacturer	Peregrine Semiconductor
File Size	297.97 KB
Description	SPDT High Power UltraCMOS
Datasheet	PE4231 Datasheet
Additional preview pages of the PE4231 datasheet.

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www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package. The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1.

Published: Dec 29, 2006 |