VTE1281W-2 GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

VTE1281W-2 Description

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package * 880 nm VTE1281W-1, W-2 PACKAGE DIMENSIONS inch (mm) .
CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP SIZE: .

VTE1281W-2 Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -40°C to 100°C 200 mW

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Datasheet Details

Part number: VTE1281W-2
Manufacturer: PerkinElmer Optoelectronics
File Size: 32.90 KB
Datasheet: VTE1281W-2_PerkinElmerOptoelectronics.pdf
Description: GaAlAs Infrared Emitting Diodes

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GaAlAs Infrared Emitting Diodes PerkinElmer Optoelectronics

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