* Low current (max. 500 mA)
* Low voltage (max. 50 V). APPLICATIONS
* High-speed switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 3 1 handbook, halfpage 2 2N1613 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIP
2N1613
Philips
51.62 KB
Npn medium power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1613 NPN medium power transistor
Product specification Supersedes data of September 1994 .
📁 Related Datasheet
2N1613 - SWITCHES AND UNIVERSAL AMPLIFIERS
(STMicroelectronics)
2N1613 2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal ca.
2N1613 - NPN Small Signal General Purpose Amplifiers
(Fairchild)
.
2N1613 - NPN LOW POWER SILICON TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV
MAXIMU.
2N1613 - NPN Low Power Silicon Transistor
(VPT)
2N718A, 2N1613, 2N1613L
NPN Low Power Silicon Transistor
Features
• Available in JAN, JANTX and JANTXV per MIL-PRF-19500/181 • Available in TO-18 (2N7.
2N1613 - Silicon Planar Epitaxial Transistors
(Comset Semiconductor)
NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector .
2N1613 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N1613
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar tr.
2N1613 - GENERAL PURPOSE TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(RBE * 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Devi.
2N1613 - Bipolar NPN Device
(Seme LAB)
2N1613
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0..
