BF908R Datasheet - Philips

Dual-gate MOS-FETs

BF908R Features

* High forward transfer admittance

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuner

BF908R General Description

Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source inpu.

BF908R Datasheet (87.01 KB)

BF908R Datasheet Preview — Preview of BF908R PDF

Datasheet Details

Part number:

BF908R

Manufacturer:

Philips

File Size:

87.01 KB

Description:

Dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product speciﬁcation Supersedes data of April 1995 File under Discrete Semiconduc.

📁 Related Datasheet

BF908 Dual-gate MOS-FETs (Philips)

BF90880SNL N-Channel MOSFET (BYD)

BF908WR N-channel dual-gate MOS-FET (NXP)

BF900 Sicherungshalter (Inter Control)

BF900 n-channel dual gate MOSFET (Siliconix)

BF901 Silicon n-channel dual gate MOS-FETs (NXP)

BF901R Silicon n-channel dual gate MOS-FETs (NXP)

BF9024SPD-M P-Channel MOSFET and Schottky Diode (BYD)

BF9028DND-A N-Channel MOSFET (BYD)

BF9028DND-GE N-Channel MOSFET (BYD)

TAGS

BF908R Dual-gate MOS-FETs Philips

Image Gallery

BF908R Features

BF908R General Description

Datasheet Details

File Size:

Description:

BF908R Distributor