BF908WR Datasheet - NXP

BF908WR N-channel dual-gate MOS-FET

Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be pr.

BF908WR Features

* High forward transfer admittance

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuner

BF908WR Datasheet (103.19 KB)