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BF908WR N-channel dual-gate MOS-FET

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 1995 Apr 25.
Depletion type field effect transistor in a plastic microminiature SOT343R package.

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Features

* High forward transfer admittance
* Short channel transistor with high forward transfer admittance to input capacitance ratio

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