BAW156 - Low-leakage double diode

Philipss

BAW156 Datasheet Preview — Preview of BAW156 PDF

Datasheet Details

Part number	BAW156
Manufacturer	Philips ↗s
File Size	69.71 KB
Description	Low-leakage double diode
Datasheet	BAW156_PhilipsSemiconductors.pdf

BAW156 Product details

Description

2 1 2 3 3 MAM206 1 DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.The diodes are in common anode configuration.Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.Fig.1 Simplified outline (SOT23) and symbol.LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak f

Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 µs.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.

📁 BAW156 Similar Datasheet

BAW156-AU - LOW LEAKAGE SWITCHING DIODES (Pan Jit International)
BAW156L - Surface Mount Low Leakge Diode (MSV)
BAW156LT1 - Monolithic Dual Switching Diode (Motorola)
BAW156T - SURFACE MOUNT LOW LEAKAGE DIODE (Diodes Incorporated)
BAW156W - LOW LEAKAGE SWITCHING DIODES (Pan Jit International)
BAW100 - Silicon Switching Diode Array (Siemens Group)
BAW100G - SILICON SWITCHING DIODES (Central Semiconductor)
BAW101 - Silicon Switching Diode (Siemens Group)

Other Datasheets by Philipss

BAW56S - High-speed double diode array
BAW56T - High-speed double diode
BAW62 - High-speed diode

Published: Jun 3, 2005 |