PJM80H04NTE Datasheet - Ping Jing

PJM80H04NTE, N-Channel MOSFET

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Fast Switching. Low RDS(ON) and Gate Charge. Low Reverse Transfer Capacitance. 100% Single Pluse Avanlanche Energy Test Feature.

Features

* VDS = 800V, ID = 4A
* RDS(ON) ＜ 3.6 Ω (@VGS=10V)
* ESD Protected ＞ 4kV (HBM)

Applications

* Power Switch
* Adaptor, Charger Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TC=25°C TC=100°C Single Pulse Avalanche Energy 2 Power Dissipation Junction and St

PJM80H04NTE-PingJing.pdf