Datasheet4U Logo Datasheet4U.com

PJM80H04NTE N-Channel MOSFET

PJM80H04NTE Description

.
Fast Switching. Low RDS(ON) and Gate Charge. Low Reverse Transfer Capacitance. 100% Single Pluse Avanlanche Energy Test Feature.

PJM80H04NTE Features

* VDS = 800V, ID = 4A
* RDS(ON) ＜ 3.6 Ω (@VGS=10V)
* ESD Protected ＞ 4kV (HBM)

PJM80H04NTE Applications

* Power Switch
* Adaptor, Charger Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TC=25°C TC=100°C Single Pulse Avalanche Energy 2 Power Dissipation Junction and St

📥 Download Datasheet

Preview of PJM80H04NTE PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PJM80H04NTE
Manufacturer
Ping Jing
File Size
1.26 MB
Datasheet
PJM80H04NTE-PingJing.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

📌 All Tags

N-Channel MOSFET Ping Jing
Ping Jing PJM80H04NTE-like datasheet