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F1007 - RF POWER VDMOS TRANSISTOR

F1007 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1007 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1007 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATING

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Datasheet Details

Part number
F1007
Manufacturer
Polyfet RF Devices
File Size
38.41 KB
Datasheet
F1007_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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