F1020 Datasheet, Transistor, Polyfet RF Devices

F1020 Features

• Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o

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Part number:

F1020

Manufacturer:

Polyfet RF Devices

File Size:

40.68kb

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📄 Datasheet

Description:

Rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

F1020 Application

• Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet"

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F1020

Polyfet RF Devices

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