Part number:
F1020
Manufacturer:
Polyfet RF Devices
File Size:
40.68 KB
Description:
Rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1020 PATENTED GOLD METALIZED SILICON GATE ENHANCEMEN
F1020
Polyfet RF Devices
40.68 KB
Rf power vdmos transistor.
📁 Related Datasheet
F1021 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1022 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1022 Micro Flow Sensor (Winsen)
F1027 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1000LC120 Extra Fast Recovery Diode (IXYS)
F1001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F100122 9-BIT BUFFER (National Semiconductor)
F100124 Hex TTL-to-ECL Translator (National Semiconductor)
F100125 Hex ECL-to-TTL Translator (National Semiconductor)
F100136 4-Stage Counter / Shift Register (National Semiconductor)
