Datasheet Specifications
- Part number
- F1020
- Manufacturer
- Polyfet RF Devices
- File Size
- 40.68 KB
- Datasheet
- F1020_PolyfetRFDevices.pdf
- Description
- RF POWER VDMOS TRANSISTOR
Description
polyfet rf devices General .
Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1020 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENF1020 Distributors
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