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F1027 - RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

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Datasheet Details

Part number: F1027
Manufacturer: Polyfet RF Devices
File Size: 40.12 KB
Datasheet: F1027_PolyfetRFDevices.pdf
Description: RF POWER VDMOS TRANSISTOR

F1027 Product details

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027.

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POWER VDMOS TRANSISTOR Polyfet RF Devices

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F1027 Stock/Price