Part number:
F1027
Manufacturer:
Polyfet RF Devices
File Size:
40.12 KB
Description:
Rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT
F1027
Polyfet RF Devices
40.12 KB
Rf power vdmos transistor.
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