F1027 Datasheet, Transistor, Polyfet RF Devices

F1027 Features

• Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C

PDF File Details

Part number:

F1027

Manufacturer:

Polyfet RF Devices

File Size:

40.12kb

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📄 Datasheet

Description:

Rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

F1027 Application

• Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet"

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F1027

Polyfet RF Devices

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