Datasheet4U Logo Datasheet4U.com

F1058 - RF POWER VDMOS TRANSISTOR

F1058 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1058 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1058 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 30 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

📥 Download Datasheet

Preview of F1058 PDF
datasheet Preview Page 2

Datasheet Details

Part number
F1058
Manufacturer
Polyfet RF Devices
File Size
38.08 KB
Datasheet
F1058_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

📁 Related Datasheet

  • F1000LC120 - Extra Fast Recovery Diode (IXYS)
  • F100122 - 9-BIT BUFFER (National Semiconductor)
  • F100124 - Hex TTL-to-ECL Translator (National Semiconductor)
  • F100125 - Hex ECL-to-TTL Translator (National Semiconductor)
  • F100136 - 4-Stage Counter / Shift Register (National Semiconductor)
  • F100164 - 16 Input Multiplexer (Fairchild Semiconductor)
  • F100180 - HIGH-SPEED 6-BIT ADDER (National Semiconductor)
  • F100183 - 2 X 8-BIT RECODE MULTIPLIER (National Semiconductor)

📌 All Tags

POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices F1058-like datasheet