Part number:
F1081
Manufacturer:
Polyfet RF Devices
File Size:
40.28 KB
Description:
Rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1081 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT
F1081
Polyfet RF Devices
40.28 KB
Rf power vdmos transistor.
📁 Related Datasheet
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Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
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