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F1206 Datasheet - Polyfet RF Devices

F1206 RF POWER VDMOS TRANSISTOR

F1206 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1206 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

F1206 Datasheet (36.08 KB)

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Datasheet Details

Part number:

F1206

Manufacturer:

Polyfet RF Devices

File Size:

36.08 KB

Description:

Rf power vdmos transistor.

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F1206 POWER VDMOS TRANSISTOR Polyfet RF Devices

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